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IRF630NSTRRPBF |
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| Part Number | IRF630NSTRRPBF |
| Manufacturer | INCHANGE |
| Description | ·Drain Current –ID=9.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot varia... |
| Features |
ction to Case
1.83 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
62
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF630NSTRRPBF
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=5.4A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0 VSD Diode Forward Voltage I... |
| Document |
 IRF630NSTRRPBF Data Sheet
PDF 227.43KB |
Similar Datasheet
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| 1 | IRF630NS |
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| 5 | IRF630N |
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Desde 2024. D4U Semiconductor.
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