IPW60R125P6 |
Part Number | IPW60R125P6 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R125P6 IIPW60R125P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤125mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-... |
Features |
·Static drain-source on-resistance: RDS(on)≤125mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 87 PD Total Dissipation @TC=25℃ 219 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Chann... |
Document |
IPW60R125P6 Data Sheet
PDF 238.44KB |
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