IPW60R099CP |
Part Number | IPW60R099CP |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R099CP IIPW60R099CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤99mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-L... |
Features |
·Static drain-source on-resistance: RDS(on)≤99mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Peak Current Capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 93 PD Total Dissipation @TC=25℃ 255 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER R... |
Document |
IPW60R099CP Data Sheet
PDF 238.86KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPW60R099C6 |
Infineon |
MOSFET | |
2 | IPW60R099C7 |
INCHANGE |
N-Channel MOSFET | |
3 | IPW60R099C7 |
Infineon |
MOSFET | |
4 | IPW60R099CP |
Infineon Technologies |
Power Transistor | |
5 | IPW60R099CPA |
Infineon |
Power Transistor | |
6 | IPW60R099CS |
Infineon |
Power Transistor |