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IPW50R299CP |
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| Part Number | IPW50R299CP |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW50R299CP IIPW50R299CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤299mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-... |
| Features |
·Static drain-source on-resistance: RDS(on)≤299mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Peak Current Capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 26 PD Total Dissipation @TC=25℃ 104 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER ... |
| Document |
 IPW50R299CP Data Sheet
PDF 238.53KB |
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Desde 2024. D4U Semiconductor.
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