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IPB031NE7N3 |
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| Part Number | IPB031NE7N3 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | OptiMOSTM3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) Pr... |
| Features |
• Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G IPB031NE7N3 G 75 V 3.1 mΩ 100 A Package Marking PG-TO263-3 031NE7N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions C... |
| Document |
 IPB031NE7N3 Data Sheet
PDF 245.16KB |
Similar Datasheet
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| 1 | IPB031NE7N3 |
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| 2 | IPB031NE7N3G |
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Desde 2024. D4U Semiconductor.
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