IPP200N25N3 |
Part Number | IPP200N25N3 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Su... |
Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 250 V 20 mW 64 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Package Marking PG-TO263-3 200N25N PG-TO220-3 200N25N PG-TO262-3 200N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter S... |
Document |
IPP200N25N3 Data Sheet
PDF 697.76KB |
Similar Datasheet
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1 | IPP200N25N3 |
INCHANGE |
N-Channel MOSFET | |
2 | IPP200N25N3G |
Infineon Technologies |
Power-Transistor | |
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