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IPP040N06N |
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| Part Number | IPP040N06N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP040N06N，IIPP040N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tes... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 107 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W... |
| Document |
 IPP040N06N Data Sheet
PDF 241.56KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP040N06N |
Infineon Technologies |
Power-Transistor |
|
| 2 | IPP040N06N3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPP040N06N3 |
Infineon |
Power Transistor |
|
| 4 | IPP040N06N3G |
Infineon Technologies AG |
Power-Transistor |
|
| 5 | IPP040N06NF2S |
Infineon |
MOSFET |
|
| 6 | IPP041N04N |
Infineon |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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