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IPP020N06N |
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| Part Number | IPP020N06N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP020N06N，IIPP020N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tes... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤2.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 214 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A ... |
| Document |
 IPP020N06N Data Sheet
PDF 241.35KB |
Similar Datasheet
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| 1 | IPP020N06N |
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Desde 2024. D4U Semiconductor.
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