IPP015N04N |
Part Number | IPP015N04N |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP015N04N,IIPP015N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tes... |
Features |
·Static drain-source on-resistance: RDS(on) ≤1.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 250 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A ... |
Document |
IPP015N04N Data Sheet
PDF 240.69KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPP015N04N |
Infineon |
Power Transistor | |
2 | IPP015N04NG |
Infineon |
Power Transistor | |
3 | IPP011N03LF2S |
Infineon |
MOSFET | |
4 | IPP014N06NF2S |
Infineon |
MOSFET | |
5 | IPP018N03LF2S |
Infineon |
MOSFET | |
6 | IPP018N10N5 |
Infineon |
MOSFET |