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IIPA65R150CFD |
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| Part Number | IIPA65R150CFD |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IIPA65R150CFD DESCRIPT ·Low Drain-Source On-Resistance : RDS(on) <0.15Ω(Max) ·Drain Current ID=22A@ TC=25℃ ·New technology for high voltage dev... |
| Features |
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS IIPA65R150CFD MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 650 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.9mA 3.5 4.5 V RDS(ON)* Drain-Source On-stage Resistance VGS= 10V; ID= 9.3A 0.15 Ω IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 1 uA VSD* Diode Forward Voltage IF= 14.0A; VGS= 0 0.9 V DYNAMIC PARAMETERS CISS Input Capacitance 2600 pF COSS Output Capacitance VGS=0V，VDS=50V，f=1.0MHZ 95 pF ... |
| Document |
 IIPA65R150CFD Data Sheet
PDF 230.10KB |
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