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D45H11 |
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| Part Number | D45H11 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type D44H11 ·Minimum Lot-to-Lot variations for robust device performance and reliable ope... |
| Features |
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isc Silicon PNP Power Transistors
INCHANGE Semiconductor
D45H11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat) Collector-EmitterSaturation Voltage
IC= -8A ;IB= -0.4 A
-1.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= -8A ;IB= -0.8 A
-1.5 V
ICES
Collector Cutoff Current
VCE=Rated VCEO; VBE= 0
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-100 μA
hFE-1
DC Current Gain
IC= -2A ; VCE= -1V
60
hFE-2
DC Current Gain
IC= -4A ; VCE= -1V
40
COB
... |
| Document |
 D45H11 Data Sheet
PDF 183.70KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | D45H1 |
Mospec Semiconductor |
Power Transistors |
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| 2 | D45H1 |
Boca Semiconductor Corporation |
Complementary Silicon Power Transistors |
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| 3 | D45H1 |
GE |
PNP POWER TRANSISTORS |
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| 4 | D45H10 |
ON Semiconductor |
Complementary Silicon Power Transistors |
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| 5 | D45H10 |
Motorola Inc |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
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| 6 | D45H10 |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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