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BDW32 |
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| Part Number | BDW32 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain- : hFE= 20(Min.) @IC= 25A ·Minimum Lot-to-Lot variations for robust device performance an... |
| Features |
herwise specified
SYMBOL
PARAMETER
INCHANGE Semiconductor
BDW32
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A; IB= 1A
0.6
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 2.5A
1.5
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC=10A; IB= 1A
1.2
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 25A; IB= 2.5A
2.0
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
hFE-1
DC Current Gain
IC=1A; VCE= 5V
60
200
hFE-2
DC Current Gain
IC=10A; V... |
| Document |
 BDW32 Data Sheet
PDF 176.42KB |
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Desde 2024. D4U Semiconductor.
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