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BD545B |
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| Part Number | BD545B |
| Manufacturer | INCHANGE |
| Description | ·Collector Current -IC= 15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C ·Complement to Type BD546/A/B/C ·Minimum Lot-to-Lot... |
| Features |
Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BD545/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD545
40
V(BR)CEO
Collector-Emitter Breakdown Voltage
BD545A BD545B
IC= 30mA ;IB=0
60 80
V
BD545C
100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.625A
0.8
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
1.0
V
VBE(on) Base-Emitter On Voltage
IC= 10A; VCE= 4V
1... |
| Document |
 BD545B Data Sheet
PDF 191.75KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | BD545 |
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| 2 | BD545 |
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Desde 2024. D4U Semiconductor.
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