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BD582 |
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| Part Number | BD582 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Complement to Type BD581 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for u... |
| Features |
CTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-Emitter Sustaining Voltage
VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
fT
Current-Gain—Bandwidth Product
CONDITIONS IC= -30mA; IB= 0 IC= -3A; IB= -0.3A IC= -3A ; VCE= -4V VCE= -100V; VEB= 0 VCE= -100V; IB= 0 VEB= -5V; IC= 0 IC= -1A ; VCE= -4V IC= -3A ; VCE= -4V IC= -0.5A ; VCE= -10V
MIN MAX UNIT
-100
V
-0.8
V
-1.5
... |
| Document |
 BD582 Data Sheet
PDF 235.53KB |
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Desde 2024. D4U Semiconductor.
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