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BD540B |
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| Part Number | BD540B |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Complement to Type BD539B ·Minimum Lot-to-Lot variations for robust device performance and r... |
| Features |
Power Transistor
BD540B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -5A; IB= -1A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -4V
ICEO
Collector Cutoff Current
VCB= -60V; IB= 0
ICES
Collector Cutoff Current
VCE= -80V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Cu... |
| Document |
 BD540B Data Sheet
PDF 189.57KB |
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Desde 2024. D4U Semiconductor.
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