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BD116 |
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| Part Number | BD116 |
| Manufacturer | INCHANGE |
| Description | ·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·Good Linearity of hFE ·Minimum Lot-to-L... |
| Features |
cified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
ICES
Collector Cutoff Current
VCE= 80V; VBE= 0
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
hFE
DC Current Gain
IC= 2A; VCE= 5V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10V; f=1MHz
MIN TYP. MAX UNIT
60
V
80
... |
| Document |
 BD116 Data Sheet
PDF 175.17KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD112 |
INCHANGE |
NPN Transistor |
|
| 2 | BD115 |
Central Semiconductor |
Small Signal Transistors |
|
| 3 | BD115 |
TRANSYS |
NPN Silicon Transistor |
|
| 4 | BD115 |
Semelab |
Bipolar NPN Device |
|
| 5 | BD11600NUX |
ROHM |
USB Switch |
|
| 6 | BD11670GWL |
ROHM |
USB Switch |
|
Desde 2024. D4U Semiconductor.
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