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2SD2141 |
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| Part Number | 2SD2141 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE = 1500(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 4A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robu... |
| Features |
141
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
330
430
V
V(BR)CBO Collector-Base Breakdown Voltage
IC=0.1mA; IE= 0
330
430
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 20mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 20mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 20mA
ICBO
Collector Cutoff Current
VCB= 330V; IE= 0
1.5
V
2.0
V
10
μA
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
fT
Current-Gain—Band... |
| Document |
 2SD2141 Data Sheet
PDF 181.51KB |
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Desde 2024. D4U Semiconductor.
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