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2SD1600 |
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| Part Number | 2SD1600 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A ·Minimum Lot-to... |
| Features |
isc Silicon NPN Darlington Power Transistor
2SD1600
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBO L
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A, IB= 30mA
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 100V, IE= 0
ICEO
Collector Cutoff Current
VCE= 100V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 3V
hFE-2
DC Current G... |
| Document |
 2SD1600 Data Sheet
PDF 185.15KB |
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Desde 2024. D4U Semiconductor.
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