Busque con el número de pieza junto con el fabricante o la descripción
2SD1522 |
Click to view a larger image
| Part Number | 2SD1522 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) ·High DC Current Gain : hFE= 500(Min) @ IC= 5A, VCE= 3V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance a... |
| Features |
2
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0
450
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 20mA ,IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A, IB= 8mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A, IB= 8mA
2.0
V
ICBO
Collector Cutoff current
VCB= 500V, IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
20
mA
hFE
DC Current Gain
IC= 5A; VCE= 3V
500
Switching Times
ton
Turn-On Time
1.5
μs
tstg
Stora... |
| Document |
 2SD1522 Data Sheet
PDF 201.98KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1520 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD1520L |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD1520S |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD1521 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD1523 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1524 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|