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2SD1114 |
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| Part Number | 2SD1114 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reli... |
| Features |
ER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
V(BR)CBO
Collector - Base Breakdown Voltage IC= 0.1mA; IE= 0
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA
VBE(sat) Base-Emitter Saturation Voltage
ICEO
Collector Cutoff Current
IC= 6A; IB= 60mA VCB= 400V; Rbe = ∞
hFE
DC Current Gain
IC= 4A; VCE= 2V
Switching Times
ton
Turn-On Time
Toff
Turn-On Time
IC= 6A; IB1= IB2= 60mA;
MIN TYP. MAX UNIT
6
V
400
V
400
V
1.5
V
2.0
V
0.1 mA
500
2.0
μs
23
μs
NOTICE： ISC reserv... |
| Document |
 2SD1114 Data Sheet
PDF 182.97KB |
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Desde 2024. D4U Semiconductor.
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