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2SD1070 |
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| Part Number | 2SD1070 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... |
| Features |
ollector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base -Emitter On Voltage
IC= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 1V
hFE-3
DC Current Gain
IC= 5A; VCE= 5V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
MIN TYP. MAX UNIT
1.5
V
1.8
V
50 μA
10 μA
20
40
200
20
90
pF
20
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the d... |
| Document |
 2SD1070 Data Sheet
PDF 182.85KB |
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Desde 2024. D4U Semiconductor.
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