Busque con el número de pieza junto con el fabricante o la descripción
2SD909 |
Click to view a larger image
| Part Number | 2SD909 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High Current Capability ·Good Linearity of hFE ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust devi... |
| Features |
DITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 5V
hFE
DC Current Gain... |
| Document |
 2SD909 Data Sheet
PDF 218.82KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|