2SD783 |
Part Number | 2SD783 |
Manufacturer | INCHANGE |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ... |
Features |
= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3.5A; IB= 1A VCB=1500V;IB= 0 VEB= 6V; IC=0
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 5V
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
tf
Fall Time
IC= 3.0A; IB1=0.6 A; IB2= 1.5A
MIN MAX UNIT
6
V
600
V
5.0
V
1.5
V
0.5
mA
10
uA
10
36
7
2.0
μs
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without... |
Document |
2SD783 Data Sheet
PDF 175.66KB |
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