2SD783 INCHANGE NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SD783

INCHANGE
2SD783
2SD783 2SD783
zoom Click to view a larger image
Part Number 2SD783
Manufacturer INCHANGE
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ...
Features = 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 3.5A; IB= 1A VCB=1500V;IB= 0 VEB= 6V; IC=0 hFE-1 DC Current Gain IC= 0.3A ; VCE= 5V hFE-2 DC Current Gain IC= 3A ; VCE= 5V tf Fall Time IC= 3.0A; IB1=0.6 A; IB2= 1.5A MIN MAX UNIT 6 V 600 V 5.0 V 1.5 V 0.5 mA 10 uA 10 36 7 2.0 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without...

Document Datasheet 2SD783 Data Sheet
PDF 175.66KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SD780
NEC
NPN Silicon Transistor Datasheet
2 2SD780
WEJ
NPN EPITAXIAL SILICON TRANSISTOR Datasheet
3 2SD780A
WEJ
NPN EPITAXIAL SILICON TRANSISTOR Datasheet
4 2SD780A
NEC
NPN Transistor Datasheet
5 2SD781
Hitachi Semiconductor
Silicon NPN Transistor Datasheet
6 2SD784
Hitachi Semiconductor
Silicon NPN Transistor Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad