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2SD652 |
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| Part Number | 2SD652 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 500V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio... |
| Features |
ss otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat)
Collector-Emitter Saturation Voltage IC= 4A; IB= 10mA
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4A; IB= 10mA
ICBO
Collector Cutoff Current
VCB=500V; IE=0
ICEO
Collector Cutoff Current
VCE= 500V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 4A; VCE= 2V
MIN TYP. MAX UNIT
500
V
500
V
7
V
1.6
V
2.0
V
... |
| Document |
 2SD652 Data Sheet
PDF 193.84KB |
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Desde 2024. D4U Semiconductor.
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