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2SD473 |
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| Part Number | 2SD473 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust devic... |
| Features |
registered trademark
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD473
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-1
DC Current Gain
COB
Output Capacitance
Switching times
VCE= 80V; IB= 0 VCB= 100V; IE= 0 VEB= 5V; ... |
| Document |
 2SD473 Data Sheet
PDF 180.94KB |
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