2SD463 |
Part Number | 2SD463 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 3000(Min) @IC= 5A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic... |
Features |
℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
ICEO
Collector Cutoff Current
VCE= 80V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE -1
DC Current Gain
IC= 3A ; VCE= 5V
hFE -2
DC Current Gain
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A ; V... |
Document |
2SD463 Data Sheet
PDF 182.17KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD460 |
INCHANGE |
NPN Transistor | |
2 | 2SD467 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
3 | 2SD467 |
Renesas |
Silicon NPN Transistor | |
4 | 2SD467 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
5 | 2SD468 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
6 | 2SD468 |
UTC |
NPN SILICON TRANSISTOR |