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2SD200 |
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| Part Number | 2SD200 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operat... |
| Features |
or-Emitter Saturation Voltage IC= 2A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 1000V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
tf
Fall Time
ICP= 2A; IB1(end)= 0.6A
5.0
V
1.5
V
10 μA
1.0 mA
8
30
95
pF
3
MHz
0.7
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information conta... |
| Document |
 2SD200 Data Sheet
PDF 173.82KB |
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