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2SD157 |
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| Part Number | 2SD157 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 50mA ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for r... |
| Features |
ONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
300
V
V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA; IE= 0
300
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 100μA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB=5mA
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 50mA; IB=5mA VCB= 300V; IE= 0
2.0
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
10
μA
hFE
DC Current Gain
IC= 50mA ; VCE= 10V
40
200
hFE-2
DC Current Gain
IC= 2A; VCE= 2V
20
fT
Current-Gain—Ban... |
| Document |
 2SD157 Data Sheet
PDF 176.67KB |
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