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2SC5802 |
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| Part Number | 2SC5802 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati... |
| Features |
YP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
ICES
Collector Cutoff Current
VCE= 1400V; VBE= 0
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
3.0
V
1.5
V
1.0 mA
10 μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
1.0 mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
15
48
hFE-2
DC Current Gain
tf
Fall Time
IC= 6A; VCE= 5V
7
IC= 6A, IB1= 1.2A; IB2= -2.4A; VCC= 200V; RL= 33.3Ω
10 0.3 μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without... |
| Document |
 2SC5802 Data Sheet
PDF 175.21KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5800 |
Renesas |
NPN SILICON RF TRANSISTOR |
|
| 2 | 2SC5801 |
NEC |
NPN TRANSISTOR |
|
| 3 | 2SC5802 |
SavantIC |
Silicon NPN Power Transistors |
|
| 4 | 2SC5803 |
Inchange Semiconductor Company |
Silicon NPN Power Transistor |
|
| 5 | 2SC5804 |
Isahaya Electronics Corporation |
SMALL-SIGNAL TRANSISTOR |
|
| 6 | 2SC5807 |
Isahaya Electronics Corporation |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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