2SC5694 |
Part Number | 2SC5694 |
Manufacturer | INCHANGE |
Description | ·High speed switching ·Large Current Capacity ·High allowable power dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS... |
Features |
Collector-Base Breakdown Voltage
IC= 10μA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 125mA
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC=2.5A; IB= 125mA VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE=2V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
MIN TYP. MAX UNIT
60
V
50
V
6
V
0.26 V
1.2
V
0.1... |
Document |
2SC5694 Data Sheet
PDF 176.59KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC5690 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
2 | 2SC5692 |
Toshiba Semiconductor |
NPN Transistor | |
3 | 2SC5694 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
4 | 2SC5695 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
5 | 2SC5696 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
6 | 2SC5696 |
INCHANGE |
NPN Transistor |