2SC5622 |
Part Number | 2SC5622 |
Manufacturer | INCHANGE |
Description | ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable oper... |
Features |
ONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 4A; VCE= 5V
fT
Current-Gain—Bandwidth Product IE= 0.1A ; VCE= 10V
Switching times
tstg
Storage Time
tf
Fall Time
IC= 4A , IB1=0.8A; IB2= -1.6A;
5.0
V
1.5
V
1.0 mA
50 mA
5
9
3
MHz
5
μs
0.5
μs
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notificatio... |
Document |
2SC5622 Data Sheet
PDF 185.06KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC5620 |
ETC |
Silicon NPN Transistor | |
2 | 2SC5621 |
ETC |
NPN TRANSISTOR | |
3 | 2SC5622 |
Panasonic Semiconductor |
NPN Transistor | |
4 | 2SC5625 |
ISAHAYA ELECTRONICS |
SMALL-SIGNAL TRANSISTOR | |
5 | 2SC5628 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
6 | 2SC5604 |
NEC |
NPN SILICON RF TRANSISTOR |