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2SC5584 |
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| Part Number | 2SC5584 |
| Manufacturer | INCHANGE |
| Description | ·Silicon NPN triple diffusion mesa type ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI... |
| Features |
ng Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB=2.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB=2.5A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 10A; VCE= 5V
tstg
Storage Time
tf
Fall Time
IC= 10A, IB1=2.5A; IB2= -5A
MIN TYP. MAX UNIT
600
V
3.0
V
1.5
V
10 μA
1.0 mA
7
14
2.7 μs
0.2 μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented onl... |
| Document |
 2SC5584 Data Sheet
PDF 182.58KB |
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Desde 2024. D4U Semiconductor.
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