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2SC5517 |
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| Part Number | 2SC5517 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- ：VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performanc... |
| Features |
5℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hFE
DC Current Gain
IC= 4.5A; IB= 0.9A
VCB= 1000V; IE= 0 VCB= 1700V; IE= 0
IC= 4.5A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
VECF
C-E Diode Forward Voltage
IF= 4.5A
Switching Times
tstg
Storage Time
tf
Fall Time
IC= 4.5A; IB1= 0.9A; IB2= -1.8A
MIN TYP. MAX UNIT
7
V
5.0
V
1.5
V
50 μA 1.0 mA
5
9
... |
| Document |
 2SC5517 Data Sheet
PDF 176.03KB |
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Desde 2024. D4U Semiconductor.
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