2SC5174 |
Part Number | 2SC5174 |
Manufacturer | INCHANGE |
Description | ·Silicon NPN epitaxial type ·Low Collector Saturation Voltage ·High transition frequency ·Complementary to 2SA1932 ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance a... |
Features |
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(ON) Base-Emitter On Voltage
IC= 500mA; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 230V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IE= 0.1A ; VCE= 10V
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1.0MHz
MIN TYP. MAX UNIT
230
V
1.0
V
1.5
V
1
μA
1
μA
100
320
100
MHz
20
pF
NOTICE: ISC reserves the rights to make changes o... |
Document |
2SC5174 Data Sheet
PDF 180.50KB |
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