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2SC5124 |
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| Part Number | 2SC5124 |
| Manufacturer | INCHANGE |
| Description | ·Silicon NPN diffused planar transistor ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for di... |
| Features |
down Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=8A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC=8A; IB= 2A
ICBO
Collector Cutoff Current
VCB= 1200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IE= -1A; VCE= 12V
MIN TYP. MAX UNIT
800
V
5
V
1.5
V
100 μA
100 μA
8
4
9
130
pF
3
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the ... |
| Document |
 2SC5124 Data Sheet
PDF 185.44KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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