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2SC4847 |
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| Part Number | 2SC4847 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio... |
| Features |
OL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE
DC current gain
IC= 3A; VCE= 5V
MIN TYP. MAX UNIT
120
V
2.0
V
1.5
V
100 μA
100 μA
60
200
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for... |
| Document |
 2SC4847 Data Sheet
PDF 182.44KB |
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Desde 2024. D4U Semiconductor.
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