2SC4743 INCHANGE NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SC4743

INCHANGE
2SC4743
2SC4743 2SC4743
zoom Click to view a larger image
Part Number 2SC4743
Manufacturer INCHANGE
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo...
Features IONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 hFE DC Current Gain IC= 1A ; VCE= 5V tf Fall Time ICP= 5A , IB1= 1A; fH= 31.5kHz MIN TYP. MAX UNIT 800 V 6 V 2.0 V 1.5 V 500 μA 15 30 0.4 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informatio...

Document Datasheet 2SC4743 Data Sheet
PDF 183.56KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SC4742
Hitachi Semiconductor
NPN TRANSISTOR Datasheet
2 2SC4742
Inchange Semiconductor
Silicon NPN Power Transistors Datasheet
3 2SC4744
INCHANGE
NPN Transistor Datasheet
4 2SC4744
Hitachi Semiconductor
Silicon NPN Transistor Datasheet
5 2SC4745
INCHANGE
NPN Transistor Datasheet
6 2SC4746
INCHANGE
NPN Transistor Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad