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2SC4589 |
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| Part Number | 2SC4589 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo... |
| Features |
akdown Voltage IC= 10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
tf
Fall Time
ICP= 7A , IB1= 1.4A
MIN TYP. MAX UNIT
800
V
5
V
5.0
V
1.5
V
500 μA
8
38
0.5 μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for th... |
| Document |
 2SC4589 Data Sheet
PDF 185.15KB |
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Desde 2024. D4U Semiconductor.
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