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2SC4510 |
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| Part Number | 2SC4510 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·High Switching Speed ·High Reliability ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for ... |
| Features |
Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4510
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0
400
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
500
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
10
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
0.8
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
1.2
V
ICBO
Collector Cutoff Current
VCB= 450V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Cur... |
| Document |
 2SC4510 Data Sheet
PDF 185.83KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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