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2SC4386 INCHANGE NPN Transistor Datasheet


INCHANGE
2SC4386
Part Number 2SC4386
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1671 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIM...
Features r Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 4V fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 4A, RL= 10Ω, IB1= -IB2= 0.4A, VCC= 40V MIN TYP. MAX UNIT 120 V 1.5 V 10 μA 10 μA 50 20 MHz 0.3 μs 3.4 μs 0.4 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without...

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