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2SC4386 |
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| Part Number | 2SC4386 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1671 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and r... |
| Features |
r Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 12V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 4A, RL= 10Ω, IB1= -IB2= 0.4A, VCC= 40V
MIN TYP. MAX UNIT
120
V
1.5
V
10 μA
10 μA
50
20
MHz
0.3
μs
3.4
μs
0.4
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without... |
| Document |
 2SC4386 Data Sheet
PDF 185.50KB |
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Desde 2024. D4U Semiconductor.
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