2SC3993 |
Part Number | 2SC3993 |
Manufacturer | INCHANGE |
Description | ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·800V/16A switching regulator ap... |
Features |
Saturation Voltage IC= 6A; IB=1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB=1.2A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.2A; VCE= 5V
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
tstg
Storage Time
tf
Fall Time
IC= 10A, IB1=2A; IB2= -4A
MIN TYP. MAX UNIT
800
V
2.0
V
1.5
V
10 μA
10 μA
10
40
8
3.0 μs
0.3 μs
hFE-1 Classifications K L M 10-20 15-30 20-40 isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconducto... |
Document |
2SC3993 Data Sheet
PDF 188.05KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC3990 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
2 | 2SC3990 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
3 | 2SC3991 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
4 | 2SC3991 |
Inchange Semiconductor |
Silicon NPM Power Transistor | |
5 | 2SC3992 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
6 | 2SC3992 |
Inchange Semiconductor |
Silicon NPN Power Transistor |