Busque con el número de pieza junto con el fabricante o la descripción
2SC3642 |
Click to view a larger image
| Part Number | 2SC3642 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage ·High breakdown voltage and high reliability ·Fast switching speed ·Wide ASO ·NPN triple diffused planar silicon transistor ·100% avalanche tested ·Minimum Lot-to-Lot... |
| Features |
HARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 1000V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-
DC Current Gain
IC= 0.8A ; VCE= 5V
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10 μA
10 μA
8
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informati... |
| Document |
 2SC3642 Data Sheet
PDF 183.55KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3640 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SC3642 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SC3643 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | 2SC3644 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SC3645 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SC3645 |
Kexin |
Transistor |
|
Desde 2024. D4U Semiconductor.
|