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2SC2525 |
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| Part Number | 2SC2525 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
| Features |
e IC= 100mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5 A
VBE
Base-Emitter Voltage
IC= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 7A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
MIN TYP. MAX UNIT
120
V
7
V
1.8
V
1.7
V
10 μA
10 μA
60
200
40
300 pF
80
MHz
NOTICE： ISC reserves the rights... |
| Document |
 2SC2525 Data Sheet
PDF 185.84KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2522 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SC2523 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC2523 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC2525 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC2526 |
Fujitsu Media Devices Limited |
SILICON HIGH SPEED POWER TRANSISTOR |
|
| 6 | 2SC2526 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
Desde 2024. D4U Semiconductor.
|