Busque con el número de pieza junto con el fabricante o la descripción
2SC2166 |
Click to view a larger image
| Part Number | 2SC2166 |
| Manufacturer | INCHANGE |
| Description | ·High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for 3 to 4 wat... |
| Features |
Semiconductor
2SC2166
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA, IE= 0
V(BR)CER Collector-Emitter Breakdown Voltage IC= 10mA; RBE= 10Ω
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA, IC= 0
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE
DC Current Gain
IC= 0.1A; VCE= 10V
PO
Output Power
ηC
Collector Efficiency
VCC= 12V; Pin= 0.25W; f= 27MHz
MIN TYP. MAX UNIT
45
V
45
V
4
V
0.1 mA
0.1 mA
35
180
6
7.5
W
55
60
%
NOTI... |
| Document |
 2SC2166 Data Sheet
PDF 181.81KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2167 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC2167 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC2168 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2168 |
SavantIC |
Silicon NPN Power Transistor |
|
| 5 | 2SC2101 |
Toshiba |
Silicon NPN POWER TRANSISTOR |
|
| 6 | 2SC2101 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|