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2SC1986 |
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| Part Number | 2SC1986 |
| Manufacturer | INCHANGE |
| Description | ·Silicon NPN tripe diffused mesa ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation... |
| Features |
IC= 3A; IB= 300mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= 500mA; VCE= 12V
MIN TYP. MAX UNIT
80
V
1.0
V
1
mA
1
mA
40
10
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in... |
| Document |
 2SC1986 Data Sheet
PDF 181.54KB |
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