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2SC1846 |
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| Part Number | 2SC1846 |
| Manufacturer | INCHANGE |
| Description | ·Silicon NPN epitaxial planar type ·Low collector to emitter saturation voltage ·Output of 3W can be obtained by a complementary with 2SA0885 ·100% avalanche tested ·Minimum Lot-to-Lot variations for ... |
| Features |
cified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 20V; IE= 0
ICEO
Collector Emitter Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V
COB
Output Capacitance
IE= 0 ; VCB= 10V,ftest= 1MHz
MIN TYP. MAX UNIT
0.5
V
1.0
V
1.0 μA
100 μA
10 μA
50
200
MHz
20
pF
hFE Classifications Q R S 85-170 120-240 170-340 ... |
| Document |
 2SC1846 Data Sheet
PDF 185.17KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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