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2SC1227 |
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| Part Number | 2SC1227 |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For clocked volt... |
| Features |
n Voltage IC=5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC=5A; IB= 0.5A
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
hFE
DC Current Gain
IC=5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 300V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
MIN TYP. MAX UNIT
1.0
V
1.5
V
200
V
7
V
50
20 μA
20 μA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the appli... |
| Document |
 2SC1227 Data Sheet
PDF 172.54KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1222 |
ETC |
Silicon NPN Transistor |
|
| 2 | 2SC1226 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Transistor |
|
| 3 | 2SC1226 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC1226A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC1227 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC1200 |
Toshiba |
TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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