2SC1108 |
Part Number | 2SC1108 |
Manufacturer | INCHANGE |
Description | ·Low Collector Saturation Voltage ·High Current 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low fre... |
Features |
TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
100
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA ; IE= 0
100
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA ; IC= 0
4
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 3A; IB= 0.3A VCB= 100V ; IE= 0
2.0
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE
DC Current Gain
IC= 1A ; VCE= 4V
100
320
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 12V; ftest= 1MHz 10
MHz
NOT... |
Document |
2SC1108 Data Sheet
PDF 181.46KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC1102 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SC1102 |
INCHANGE |
NPN Transistor | |
3 | 2SC1106 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SC1106 |
INCHANGE |
NPN Transistor | |
5 | 2SC1108 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC1111 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SC1111 |
INCHANGE |
NPN Transistor | |
8 | 2SC1112 |
INCHANGE |
NPN Transistor | |
9 | 2SC1113 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC1113 |
INCHANGE |
NPN Transistor |