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2SC1106 |
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| Part Number | 2SC1106 |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 Package ·High power dissipation ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For voltage... |
| Features |
C= 1.5A; IB= 0.3A
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
hFE
DC Current Gain
IC= 0.2A; VCE= 5V
MIN TYP. MAX UNIT
5.0
V
1.5
V
250
V
5
V
30
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized qual... |
| Document |
 2SC1106 Data Sheet
PDF 173.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC1102 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC1106 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC1108 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC1108 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC1111 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC1111 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC1112 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC1113 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC1113 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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