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2SC1080 |
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| Part Number | 2SC1080 |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 Package ·High power dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio power amplifier applicati... |
| Features |
ge IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
hFE-1
DC Current Gain
IC= 2.0A; VCE= 5V
hFE-2
DC Current Gain
IC= 7.0A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 2A ; VCE= 5V
MIN TYP. MAX UNIT
3.0
V
2.5
V
110
V
5
V
40
140
15
4
MHz
hFE-1 Classifications R 40-80 Y 70-140 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general elect... |
| Document |
 2SC1080 Data Sheet
PDF 178.32KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1080 |
SavantIC |
(2SC1079 / 2SC1080) SILICON POWER TRANSISTOR |
|
| 2 | 2SC108A |
Toshiba |
Silicon NPN Epitaxial Type Transistor |
|
| 3 | 2SC1000 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SC1000 |
ETC |
Silicon NPN Transistor |
|
| 5 | 2SC1001 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 6 | 2SC1002 |
SavantIC |
Silicon NPN Power Transistors |
|
Desde 2024. D4U Semiconductor.
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